Описание
Описание
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 1.35V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 90A
Maximum junction temperature (Tj), °C:
Rise time, nS: 74
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 1.35V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 90A
Maximum junction temperature (Tj), °C:
Rise time, nS: 74
